CM100TU-12H_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Collector current
ICM
IE (Note 2) _{Emitter current}
IEM (Note 2)
PC (Note 3) Maximum collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
—
Mounting torque
—
Weight
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M4 screw
Mounting M5 screw
Typical value
Ratings
600
±20
100
200
100
200
400
–40 ~ +150
–40 ~ +125
2500
1.3 ~ 1.7
2.5 ~ 3.5
570
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item
Test Conditions
Limits
Min
Typ
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
—
VGE(th)
Gate-emitter
threshold voltage
IC = 10mA, VCE = 10V
4.5
6
IGES
Gate-leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat)
Collector-emitter
saturation voltage
IC = 100A, VGE = 15V
Tj = 25°C
—
2.4
(Note 4) _{Tj = 125°C}
—
2.6
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
—
—
—
QG
Total gate charge
VCC = 300V, IC = 100A, VGE = 15V
—
200
td (on)
Turn-on delay time
VCC = 300V, IC = 100A
—
—
tr
td (off)
Turn-on rise time
Turn-off delay time
VGE = ±15V
RG = 6.3Ω
—
—
—
—
tf
Turn-off fall time
Resistive load
—
—
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
IE = 100A, VGE = 0V
IE = 100A,
die / dt = –200A / µs
Junction to case, IGBT part (Per 1/6 module)
Junction to case, FWDi part (Per 1/6 module)
—
—
—
—
—
0.24
—
—
—
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, conductive grease applied
—
0.11
(Per 1/6 module)
(Note 6)
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Unit
Max
1 mA
7.5
V
0.5 µA
3.0
—
V
8.8 nF
4.8 nF
1.3 nF
—
nC
100 ns
250 ns
200 ns
300 ns
2.6
V
160 ns
—
µC
0.31 K/W
0.7 K/W
—
K/W
Feb. 2009
2