CM100DU-34KA_11 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3 _tf
2
10^{3 td(off)}
7
5 td(on)
3
2
10²
7
5 tr
3
2
10¹
10¹ 2 3
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^{110–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101}
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.14K/ W
3 _{FWDi part:}
2 _{Per unit base = Rth(j–c) = 0.24K/ W}
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
MITSUBISHI IGBT MODULES
CM100DU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
10¹
10¹
23
trr
Irr
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 100A
16
VCC = 800V
12
VCC = 1000V
8
4
0
0 100 200 300 400 500 600
GATE CHARGE QG (nC)
Feb. 2009
4