CM100DU-34KA_11 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25°C
12
11
VGE = 20V
160
15
14
10
120
80
9
40
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
40 80 120 160 200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 Tj = 25°C
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM100DU-34KA
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VCE = 10V
Tj = 25°C
160
Tj = 125°C
120
80
40
0
0
4
8
12 16
20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 200A
4
IC = 100A
2
IC = 40A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
10¹
Cies
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009