BCR25A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25B)
160
NATURAL CONVECTION
140 ^{ALL FINS ARE BLACK PAINTED}
ALUMINUM AND GREASED
120
100 100 t3.0
100
120 120 t3.0
80
160 160 t4.0
60
40
WITHOUT
20 _{MICA PLATE}
WITH GREASE
0
0 4 8 12 16 20 24 28 32
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
III QUADRANT
100
I QUADRANT
80
60
40
20
0
0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
3 ^TYPICAL
2 EXAMPLE
VOLTAGE WAVEFORM
t
10²
7
5
3
2
Tj = 125°C
(dv/dt)C VD
IT = 4A, τ = 500µs _{CURRENT WAVEFORM}
VD = 200V, f = 3Hz
IT
(di/dt)C
τ
t
10¹
7
5
3
2
10⁰
7 ^{I QUADRANT}
5
III QUADRANT
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
3 ^TYPICAL
2 EXAMPLE
A
6Ω
10^{3 Tj = 25°C} _6V
7
5
3
IRGT III
2
IRGT I
IFGT I
10²
7
5
3
2
tw
0.1s
10¹
7
5
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
Feb.1999