BCR25A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

BCR25A, BCR25B
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
(19.6)
φ3.3 MIN
1
8.0
φ1.3 MIN
3
3
1
3
(φ14)
• IT (RMS) ...................................................................... 25A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT # ........................................................ 50mA
• IRGT !..................................................................... 75mA
APPLICATION
Contactless AC switches, light dimmer,
on/off control of copier lamps
2 ^M6×1.0
1 T1 TERMINAL
2
2 T2 TERMINAL BCR25A
3 GATE TERMINAL
39 MAX
30±0.2
2-φ4.2 MIN
8.0
φ3.3 MIN
1
φ1.3 MIN
3
3
φ14.2 MAX
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ^V1
Non-repetitive peak off-state voltage ^V1
BCR25B ²
Voltage class
Unit
8
10
400
500
V
600
600
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
PG (AV)
VGM
IGM
TI
Tstg
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Mounting torque
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave, 360° conduction, Tc=92°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
BCR25A only
BCR25A (Typical value)
BCR25B (Typical value)
Ratings
25
250
262
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
30
2.94
18
23
Unit
A
A
A²s
W
W
V
A
°C
°C
kg·cm
N·m
g
Feb.1999