BCR16HM Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140 ^{ALUMINUM AND GREASED}
NATURAL CONVECTION
120
160 160 t4.0
100
120 120 t3.0
80 80 t2.0
80
60
40
CURVES APPLY
20 _{REGARDLESS OF}
0 ^{CONDUCTION ANGLE}
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
III QUADRANT
100
80
#2
#1
60
40
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
10²
TYPICAL
7 _EXAMPLE
5
4
TC = 125°C
3 ^{IT = 4A}
τ = 500µs
2 _{VD = 200V}
f = 3Hz
10¹
III QUADRANT
7
5 MINIMUM
4 _CHARAC-
3 _TERISTICS
2 VALUE
I QUADRANT
10⁰
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Feb.1999