BCR16HM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

BCR16HM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
2
5.0 MIN
39.2 MAX
20.2 MAX
Dimensions
in mm
2-φ4.2
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
• Viso ........................................................................ 2200V
• UL Recognized: File No. E80276
1
φ2.0(T1,T2)
3
20.1 MAX
2
21.6 MAX
30.0±0.2
7.0 7.0
8.25
6.35
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
φ1.55(G)
T1 TERMINAL
INDICATION
1.5
GATE
TERMINAL
INDICATION
TRADEMARK
3-φ1.3
TYPE
∗
NAME
LOT No.
VOLTAGE
CLASS
Tb TEST POINT
BCR16HM (C TYPE)
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
Parameter
IT (RMS)
RMS on-state current
ITSM
I^2t
Surge on-state current
I^2t for fusing
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Mounting torque
—
Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave, 360° conduction,
Tb=82°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Screw M4
Ta=25°C, AC 1 minute, T2 · T1 · G terminal to base
Ratings
16
170
121
5
0.5
10
2
–40 ~ +125
–40 ~ +125
15
1.47
26
2200
Unit
A
A
A²s
W
W
V
A
°C
°C
kg·cm
N·m
g
V
Feb.1999