M2V64S20DTP-6 Datasheet, PDF (32/51 Pages) Mitsubishi Electric Semiconductor – 64M Synchronous DRAM

MITSUBISHI LSIs
SDRAM (Rev.3.2)
Feb.'00
M2V64S20DTP-6,-6L,-7,-7L,-8,-8L ^{(4-BANK x 4,194,304-WORD x 4-BIT)}
M2V64S30DTP-6,-6L,-7,-7L,-8,-8L ^{(4-BANK x 2,097,152-WORD x 8-BIT)}
M2V64S40DTP-6,-6L,-7,-7L,-8,-8L ^{(4-BANK x 1,048,576-WORD x 16-BIT)}
64M Synchronous DRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vs s = VssQ = 0V, Output Open, unless otherwise noted)
ITEM
operating current
tRC=min, tCLK =min,
BL=1 , CL=3
precharge standby
current in Non Power
down mode
/CS > Vcc -0.2V
precharge standby
current in Power down
mode
/CS > Vcc -0.2V
single bank operation
tCLK = 15ns
CKE = H
VIH > Vcc - 0.2V
VIL < 0.2V
CLK = L & CKE = H
VIH > Vcc - 0.2V
VIL < 0.2V
all input signals are fixed.
tCLK = 15ns
CKE = L
CLK = L
CKE = L
Symbol
Icc1
Organi-
zation
x4
x8
x16
Icc2N x4/x8/x16
Icc2NS x4/x8/x16
Icc2P x4/x8/x16
Icc2PS x4/x8/x16
Limits (max.)
Unit
-6
-7
-8
75
70
70
75
70
70 mA
85
80
80
20
20
20 ^mA
15
15
15 mA
2
2
2 mA
1
1
1
mA
active standby current
CKE = H, tCLK=15ns
CKE = H, CLK=L
Icc3N x4/x8/x16
Icc3NS x4/x8/x16
30
30
30
mA
25
25
25
burst current
All Bank Active
tCLK = min
BL=4, CL=3
x4
Icc4
x8
90
70
70
90
70
70 mA
x16
100
80
80
auto-refresh current
self-refresh current
tRC=min, tCLK=min
CKE < 0.2V
Icc5
x4/x8/x16
130
x4 _6,7,8
1
Icc6
/x8
/x16 ^{6L,7L,8L 0.5}
110
110 mA
1
1
mA
0.5
0.5 mA
NOTE)
1. Icc(max) is specif ied at the output open condition.
2. Input signals are changed one time during 30ns.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70'C, Vdd = VddQ = 3.3 ± 0.3V, Vs s = VssQ = 0V, unless otherwise noted)
Symbol
Parameter
Test Conditions
VOH(DC) High-Level Output Voltage (DC) IOH=-2mA
VOL(DC) Low-Level Output Voltage (DC) IOL= 2mA
IOZ
Off-state Output Current
Q floating Vo=0 ~ VddQ
II
Input Current
VIH=0 ~ VddQ+0.3V
Limits
Min.
Unit
Max.
2.4
V
0.4
V
-5
5
µA
-5
5
µA
MITSUBISHI ELECTRIC
32