RD05MMP1 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
40
Ta=+25°C
f=941MHz
Vdd=7.2V
Idq =1.0A
30
Po
80
60
20
10
0
5
ηｄ
40
Gp
20
Ｉｄｄ
0
10 15 20 25 30 35
Pin(dBm)
Pin-Po CHARACTERISTICS @f=941MHz
20
Ta=25°C
f=941MHz
Vdd=7.2V
15 ^Idq=1.0A
80
70
60
ηd
50
10
Po
40
30
5
20
Idd
10
0
0
0.0
0.5
1.0
1.5
Pin(W)
Vdd-Po CHARACTERISTICS @f=941MHz
10
Ta=25°C
f=941MHz
8
Pin=0.7W
Idq=1.0A
Zg=ZI=50 ohm
5
Po
4
6
3
4
Idd
2
2
1
0
0
4
6
8
10
12
Vdd(V)
Vgs-Ids CHARACTORISTICS 2 ^+25°C
8
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
6
4
2
0
0
1
2
3
4
5
Vgs(V)
RD05MMP1
MITSUBISHI ELECTRIC
3/7
1st Jun. 2006