RD05MMP1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
(a)
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
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OUTLINE DRAWINGç
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0.2+/-0.05
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(b)
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7.0+/-0.2
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(b)
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specifically designed for UHF RF power ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç
amplifiers applications.
(d)
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
APPLICATION
For output stage of high power amplifiers in ç ç ç
941MHz band mobile radio sets.
RoHS COMPLIANT
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
SIDE VIEW^{ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç}
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
VGSS Gate to source voltage Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input Power
Zg=Zl=50Ω
ID
Drain Current
-
Tch
Junction Temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
-
-
10
IGSS Gate to source leak current
VGS=10V, VDS=0V
-
-
1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
0.5
-
2.5
Pout Output power
f=941MHz , VDD=7.2V
5.5
6
-
ηD Drain efficiency
Pin=0.7W,Idq=1.0A
43
-
-
VDD=9.5V,Po=5.5W(Pin Control)
VSWRT Load VSWR tolerance
f=941MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD05MMP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006