PS11035 Datasheet, PDF (3/5 Pages) Powerex Power Semiconductors – Intellimod™ Module Application Specific IPM (20 Amperes/600 Volts)

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11035
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Item
Condition
Ratings
Unit
Tj
Junction temperature
(Note 2)
–20 ~ +125
°C
Tstg
Storage temperature
—
–40 ~ +125
°C
TC
Module case operating temperature
(Fig. 3)
–20 ~ +100
°C
VISO
Isolation voltage
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
2500
Vrms
—
Mounting torque
Mounting screw: M4
0.98 ~ 1.47
N·m
(Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM
power chips (IGBT & FWDi) is Tj < 150.
CASE TEMPERATURE MEASUREMENT POINT
TC
(Fig. 3)
THERMAL RESISTANCE
Symbol
Item
Rth(jc)Q
Rth(jc)F
Rth(jc)FR
Rth(cf)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Converter Di (1/6)
Case to fin thermal, grease applied (1 Module)
Ratings
Unit
Min.
Typ.
Max.
—
—
2.3 °C/W
—
—
3.1 °C/W
—
—
4.8 °C/W
—
—
0.074 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VD = 15V, VDB = 15V unless otherwise noted)
Symbol
Item
Condition
VCE(sat)
Collector-emitter saturation
voltage
Tj = 25°C, Input = ON, Ic = 20A, VD = VDB = 15V
(Shunt voltage drop not included)
VEC
FWDi forward voltage
Tj = 25°C, –IC = 20A
VFR
Converter diode voltage
Tj = 25°C, IFR = 10A
IRRM
Converter diode reverse current VR = VRRM, Tj = 125°C
ton
tc(on)
toff
Switching times
1/2 Bridge inductive, Input = 5V ↔ 0V
VCC = 300V, IC = 20A, Tj = 125°C
VD = 15V, VDB = 15V
tc(off)
trr
FWDi reverse recovery time
Note: ton, toff include delay time of the internal control
circuit.
Short circuit endurance
@VCC ≤ 400V, Input = 5V → 0V (One-Shot)
(Output, Arm, and Load Short Circuit Modes) –20°C ≤ Tj (start) ≤ 125°C, 13.5V ≤ VD = VDB ≤ 16.5V
Switching SOA
@VCC ≤ 400V, Input = 5V ↔ 0V, Tj ≤ 125°C
IC < OC trip level, 13.5V ≤ VD = VDB ≤ 16.5V
Ratings
Min.
Typ.
Max. ^Unit
—
—
2.9
V
—
—
2.9
V
—
—
1.5
V
—
—
8
mA
0.3
0.6
1.5
µs
—
0.5
1.0
µs
—
1.6
2.5
µs
—
0.5
1.3
µs
—
0.12
—
µs
• No destruction
• FO output by protection operation
• No destruction
• No protecting operation
• No FO output
Jan. 2000