M66007P Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – 12-BIT INPUT EXPANDER

MITSUBISHI 〈DIGITAL ASSP〉
M66007P/FP
ABSOLUTE MAXIMUM RATINGS (Ta = 20 ~ 75°C unless otherwise noted)
Symbol
Parameter
Conditions
VCC
Supply voltage
VI
Input voltage
VO
Output voltage
IIK
Input protection diode current
VI<0V
VI>VCC
IOK
Output incidental diode current
VO<0V
VO>VCC
ICC
Power/GND
VCC, GND
Tstg
Storage temperature
12-BIT INPUT EXPANDER
Ratings
Unit
–0.5 ~ +7.0
V
–0.5 ~ VCC + 0.5
V
–0.5 ~ VCC + 0.5
V
–20
mA
20
–20
mA
20
±20
mA
–60 ~ 150
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
Supply voltage
VI
Input voltage
VO
Output voltage
Topr
Operating temperature
Limits
Unit
Min.
Typ.
Max.
2
6
V
0
VCC
V
0
VCC
V
–20
75
°C
ELECTRICAL CHARACTERISTICS (Vcc = 2 ~ 6V unless otherwise noted)
Symbol
Parameter
Conditions
VT+
Threshold voltage in
positive direction
VO=0.1V, VCC–0.1V, IO=20µA
VT–
Threshold voltage in
negative direction
VO=0.1V, VCC–0.1V, IO=20µA
VOL
Low-level output voltage
VI=VT+, VT–
VCC=4.5V
IOL=20µA
IOL=1mA
VOH
High-level output voltage
VI=VT+, VT–
VCC=4.5V
IOH=–20µA
IOH=–1mA
IO
Maximum output leak
current
VI=VT+, VT–
VCC=6V
VO=VCC
VO=GND
ICC
Static consumption
current
VI=VCC, GND, VCC=6V, LE/D=“H”
VI=VCC, GND, VCC=6V, LE/D=“L”
Limits
Ta=25˚C
Ta= –20~75˚C Unit
Min. Typ. Max. Min. Max.
0.35
× VCC
0.8 0.35 0.8
× VCC × VCC × VCC
V
0.2
× VCC
4.4
4.1
0.65 0.2 0.65
× VCC × VCC × VCC
V
0.1
0.1
V
0.4
0.5
4.4
V
4.0
1.0
10.0 µA
–0.8
–1.2 mA
10.0
100.0 µA
0.8
1.2 mA
SWITCHING CHARACTERISTICS (Vcc=5V)
Symbol
Parameter
fmax
Maximum repetition frequency
tPLH
tPHL
Output “L-H”, “H-L” propagation time CLK-LE/D
tPLZ
Output “L-Z”, “H-Z” propagation time CLK-LE/D
tPHZ
Conditions
CL=50pF (Note 1)
Limits
Ta = –20 ~ 75˚C
Min.
Typ.
Max.
2
400
400
400
400
Unit
MHz
ns
ns
ns
ns
3