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FY5ACH-03A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
1.2
0.8
ID = 12A
5A
3A
0.4
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 10V
Pulse Test
16
12
8
4
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
103
7
5
4
3
2
102
7
5
4 TCh = 25°C
3 f = 1MHZ
2 VGS = 0V
10–1 2 3 4 5
7 100
Ciss
Coss
Crss
2 3 4 5 7 101
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
VGS = 2.5V
60
40
4V
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
VDS = 10V
7 Pulse Test
5
4
3
TC = 25°C
2
75°C
125°C
101
7
5
4
3
2
100
7
100
2 3 4 5 7 101
2 3 45 7
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
TCh = 25°C
7 VDD = 15V
5 VGS = 4V
4 RGEN = RGS = 50Ω
3
2
tr
102
7
5
td(off)
tf
4
3
td(on)
2
101
7
100
2 3 4 5 7 101
2 3 45 7
DRAIN CURRENT ID (A)
Sep.1998
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