FY5ACH-03A Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
ID = 2.5A, VGS = 2.5V
ID = 5A, VGS = 4V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2.5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambient
IS = 1.7A, dis/dt = –50A/µs
Limits
Min.
Typ. Max.
30
—
—
—
—
±0.1
—
—
0.1
0.5
0.9
1.3
—
40
50
—
52
80
—
0.20 0.25
—
11
—
—
750
—
—
180
—
—
80
—
—
18
—
—
45
—
—
52
—
—
44
—
—
0.75
1.1
—
—
78.1
—
100
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
3
tw = 10µs
2
10¹
100µs
7
5
3
1ms
2
10⁰
7
10ms
5
100ms
3
2
10^{–1 TC = 25°C}
7 ^{Single Pulse}
5
23
5 7 10⁰ 2 3
DC
5 7 10¹ 2 3 5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VGS = 5V _{Pulse Test}
4V
16
3.5V
2.5V
3V
12
OUTPUT CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
Pulse Test
VGS = 5V
8
4V
3.5V
3V
6
2.5V
2V
8
2V
4
1.5V
PD = 1.6W
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
4
PD = 1.6W
2
1.5V
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998