FS30KMH-06 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
ID = 50A
1.2
0.8
30A
0.4
10A
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
40
Pulse Test
30
20
10
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
2
Ciss
10³
7
5
3
Coss
2
10²
7
5
3 Tch = 25°C
2 f = 1MHZ
VGS = 0V
10¹
3 5 7 10⁰ 2 3
Crss
5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS30KMH-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
VGS = 2.5V
40
30
4V
20
10
TC = 25°C
Pulse Test
0
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = 10V
Pulse Test
5
4
3
2
TC = 25°C
10¹
75°C
7
125°C
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
TCh = 25°C
VDD = 30V
5
4
VGS = 4V
RGEN = RGS = 50Ω
3
2
td(off)
tf
10²
7
tr
5
4
td(on)
3
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
Feb.1999