FS30KMH-06 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS30KMH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 2.5V
ID = 15A, VGS = 4V
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 15A, VGS = 4V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
60
—
—
—
—
±0.1
—
—
0.1
0.6
0.9
1.2
—
25
30
—
30
39
—
0.38 0.45
—
34
—
—
2000
—
—
320
—
—
170
—
—
33
—
—
135
—
—
145
—
—
150
—
—
1.0
1.5
—
—
5.00
—
65
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
10²
7
tw = 10ms
5
3
2
10¹
100ms
7
5
3
1ms
2
10ms
10⁰
7 TC = 25°C
5 _{Single Pulse}
DC
3
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
50 ^{VGS = 5V 4V 3.5V}
3V
TC = 25°C
40
Pulse Test
2.5V
30
20
2V
OUTPUT CHARACTERISTICS
(TYPICAL)
20 ^{VGS = 5V 4V 3V 2.5V}
PD = 25W
16
2V
12
TC = 25°C
Pulse Test
8
10
4
PD = 25W
1.5V
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999