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| CM50TU-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM50TU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25oC
15
12
80
VGE = 20V
11
60
10
40
9
20
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 100A
6
IC = 50A
4
2
IC = 20A
0
0
103
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
tf
102
td(off)
td(on)
101
100
100
tr
VCC = 600V
VGE = ±15V
RG = 6.3 â¦
Tj = 125°C
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
VCE = 10V
80
Tj = 25°C
Tj = 125°C
60
40
20
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
Tj = 25°C
Tj = 125°C
3
2
1
0
0 20 40 60 80 100
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
101
Cies
100
Coes
101
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -100A/µsec
Tj = 25°C
trr
102
101
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
10-1
Cres
VGE = 0V
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 50A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
75
150
225
300
GATE CHARGE, QG, (nC)
Sep.1998
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