CM50TU-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM50TU-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
G
EH
A
B
F
EH
G
ER
S 4 - Mounting
Holes
K
L
GuP
C
EuP
D
T_C
Measured
Point
GvP
EvP
GwP
EwP
GuN
EuN
GvN
EvN
T_C
Measured
Point
GwN
M
EwN
u
v
w
5 - M4 NUTS
K
J
J
N
EH E H E
TAB#110 t=0.5
P
Q
P
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GuN
EuN
N
GvN
EvN
GwN
EwN
Outline Drawing and Circuit Diagram
Dimensions Inches
A
4.02
B
3.15±0.01
C
3.58
D
2.91±0.01
E
0.43
F
0.79
G
0.39
H
0.75
J
0.79
Millimeters
102.0
80.0±0.25
91.0
74.0±0.25
11.0
20.0
10.0
19.1
20.0
Dimensions Inches
K
0.05
L
0.74
M
1.55
N
0.12
P
0.32
Q
1.02
R
0.47
S
0.22 Dia.
Millimeters
1.25
18.7
39.3
3.05
8.1
26.0
11.85
5.5 Dia.
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50TU-24H is a
1200V (V_CES), 50 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes
50
V_CES
Volts (x 50)
24
Sep.1998