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| CM50TF-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25oC
VGE = 20V
12
15
75
11
50
10
25
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 100A
6
IC = 50A
4
2
0
0
103
IC = 20A
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
tf
102
td(off)
td(on)
101
100
VCC = 300V
tr
VGE = ±15V
RG = 13â¦
Tj = 125°C
101
COLLECTOR CURRENT, IC, (AMPERES)
102
TRANSFER CHARACTERISTICS
(TYPICAL)
100
VCE = 10V
Tj = 25°C
75
Tj = 125°C
50
25
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
25
50
75
100
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
101
Cies
101
100
Coes
100
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101
Irr
102
100
trr
VGE = 0V
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 50A
16
VCC = 200V
12
VCC = 300V
8
di/dt = -100A/µsec
Tj = 25°C
101
100
101
EMITTER CURRENT, IE, (AMPERES)
10-1
102
4
0
0
50 100 150 200 250
GATE CHARGE, QG, (nC)
Sep.1998
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