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CM50TF-12H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE
MITSUBISHI IGBT MODULES
CM50TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
JN
S - DIA.
(2 TYP.)
BuP EuP
A
B
C
BvP EvP
BwP EwP
P
u
v
w
N
ED
BuN EuN
BvN EvN
BwN EwN
M
F
R
L
F
R
L
K
R
Q
TAB #250, t = 0.8
TAB #110, t = 0.5
G
P
P
(BuP)
GuP
EuP
u
(BvP)
GvP
EvP
v
H
R
(BwP)
GwP
EwP
w
(BuN)
GuN
EuN
N
(BvN)
GvN
EvN
(BwN)
GwN
EwN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
5.00
4.33±0.01
3.86
2.20
1.57
1.12
1.04
1.01
0.98
Millimeters
127.0
110.0±0.2
98.0
56.0
40.0
28.5
26.5
25.6
25.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.85
0.83
0.75
0.71
0.69
0.65
0.30
0.22 Dia.
Millimeters
21.5
21.0
19.0
18.0
17.5
16.5
7.5
Dia. 5.5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (VCES), 50 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes
50
VCES
Volts (x 50)
12
Sep.1998