CM50E3U-24H_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
100
VGE = 20
15
(V)
12
Tj = 25°C
75
11
50
10
25
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
25
50
75
100
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
3
Tj = 25°C
2
10²
7
5
3
2
10¹
7
5
3
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM50E3U-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
100
VCE = 10V
75
50
25
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 100A
4
IC = 50A
2
IC = 20A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10¹
7
5
Cies
3
2
10⁰
7
5
Coes
3
2
Cres
10^–1
7
5
3
2
VGE = 0V
10^–₁²_{0–1 2 3 5 7 100 2 3}
5 7 10¹ 2 3
5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009