CM50E3U-24H_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM50E3U-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
50
100
50
100
400
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Item
Test Conditions
Limits
Min
Typ
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
—
VGE(th)
Gate-emitter
threshold voltage
IC = 5mA, VCE = 10V
4.5
6
IGES
Gate-leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat)
Collector-emitter
saturation voltage
IC = 50A, VGE = 15V
Tj = 25°C
(Note 4) _{Tj = 125°C}
—
2.9
—
2.85
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
—
—
—
QG
Total gate charge
VCC = 600V, IC = 50A, VGE = 15V
—
187
td (on)
Turn-on delay time
VCC = 600V, IC = 50A
—
—
tr
Turn-on rise time
VGE = ±15V
—
—
td (off)
Turn-off delay time
RG = 6.3Ω
—
—
tf
Turn-off fall time
Resistive load
—
—
VEC (Note 2) Emitter-collector voltage
IE = 50A, VGE = 0V
—
—
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
VFM
trr
Qrr
Rth(j-c)
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
IE = 50A
die / dt = –100A / µs
Junction to case, IGBT part
Junction to case, FWDi part
IF = 50A, Clamp diode part
IF = 50A
dif / dt = –100A / µs, Clamp diode part
Junction to case, Clamp diode part
—
—
—
0.28
—
—
—
—
—
—
—
—
—
0.28
—
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, conductive grease applied
—
0.07
(Per 1/2 module)
(Note 6)
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Max
1
7.5
0.5
3.7
—
7.5
2.6
1.5
—
80
200
150
350
3.2
300
—
0.31
0.7
3.2
300
—
0.7
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
V
ns
µC
K/W
K/W
Feb. 2009
2