CM400DY-66H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj=25°C
VGE=12V
VGE=13V
600
VGE=14V
VGE=11V
VGE=15V
400
VGE=10V
VGE=20V
200
VGE=9V
VGE=8V
VGE=7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
VCE=10V
600
400
200
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 800A
IC = 400A
6
4
2
IC = 160A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
4
2
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
7
5
Cies
3
2
10¹
7
5
3
Coes
2
10⁰
7
Cres
5
3 ^{VGE = 0V, Tj = 25°C}
2 ^{Cies, Coes : f = 100kHz}
Cres
: f = 1MHz
10^–1
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003