CM400DY-66H Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM400DY-66H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM400DY-66H
q IC ................................................................... 400A
q VCES ....................................................... 3300V
q Insulated Type
q 2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
130
114
57±0.25
4 - M8 NUTS
E1
CM C1
C2
E2
C2
C2
G2
E2
E2
C1
G1
E1
5 - M4 NUTS
E1
E2(C1)
G1
G2
C2
7.2
36.3
48.8
24.5
53.6
61.5
18
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
15
5.7
39.5
15
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
E1
Mar. 2003