CM400DY-24A_09 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
VGE =
700
20V
15
Tj = 25°C
13
600
12
500
400
11
300
200
10
100
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 800A
IC = 400A
2
IC = 160A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
Cies
3
2
10¹
7
5
Coes
3
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
MITSUBISHI IGBT MODULES
CM400DY-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4
VGE = 15V
3
2
1
Tj = 25°C
Tj = 125°C
0
0 100 200 300 400 500 600 700 800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
Tj = 25°C
Tj = 125°C
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
td(off)
7
tf
5
td(on)
3
2
10²
7
5
3
2
101¹ ₀₁
tr
2 3 5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
Feb. 2009