CM400DY-24A_09 Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM400DY-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC = 85°C^*1
Pulse
Pulse
TC = 25°C^*1
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
400
800
400
800
2710
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
VCE = VCES, VGE = 0V
IC = 40mA, VCE = 10V
±VGE = VGES, VCE = 0V
IC = 400A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 400A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 400A
VGE = ±15V
RG = 0.78Ω, Inductive load
IE = 400A
IE = 400A, VGE = 0V
IGBT part (1/2 module)^*1
FWDi part (1/2 module)^*1
Case to heat sink, Thermal compound Applied (1/2 module)^*2
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.78
Limits
Typ.
—
7
—
2.1
2.4
—
—
—
2000
—
—
—
—
—
16
—
—
—
0.02
—
*^{1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.}
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
Max.
1
8
0.5
3.0
—
70
6
1.4
—
550
180
600
350
250
—
3.8
0.046
0.085
—
10
Unit
mA
V
µA
V
nF
nC
ns
ns
µC
V
K/W
Ω
Feb. 2009
2