CM30MD-12H Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM30MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
Test conditions
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note. 1)
trr (Note. 1)
Qrr (Note. 1)
Rth(j-f)Q (Note. 5)
Rth(j-f)R (Note. 5)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
VCE = VCES, VGE = 0V
IC = 3.0mA, VCE = 10V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
IC = 30A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 30A, VGE = 15V
VCC = 300V, IC = 30A
VGE1 = VGE2 = 15V
RG = 21Ω
Resistive load
IE = 30A, VGE = 0V
IE = 30A, VGE = 0V
die / dt = – 60A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
BRAKE PART
Min.
—
4.5
—
—
(Note. 4)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Symbol
Parameter
Condition
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
VFM
Rth(j-f)Q (Note. 5)
Rth(j-f)R (Note. 5)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-to-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
VCE = VCES, VGE = 0V
IC = 3.0mA, VCE = 10V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
IC = 30A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 30A, VGE = 15V
IF = 30A, Clamp diode part
IGBT part
Clamp diode part
(Note. 4)
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
CONVERTER PART
Symbol
Parameter
Condition
Min.
IRRM
Repetitive reverse current
VR = VRRM, Tj = 150°C
—
VFM
Forward voltage drop
IF = 30A
—
Rth(j-f) (Note. 5) Thermal resistance
Per 1/6 module
—
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
• _{The conductive greese applied, between module and fin.}
• _{Al plate is used as fin.}
Limits
Typ.
—
6
—
2.1
2.15
—
—
—
90
—
—
—
—
—
—
0.08
—
—
Limits
Typ.
—
6
—
2.1
2.15
—
—
—
90
—
—
—
Limits
Typ.
—
—
—
Max.
1
7.5
0.5
2.8
—
3.0
2.4
0.6
—
120
300
200
300
2.8
110
—
1.9
2.4
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
Max.
1
7.5
0.5
2.8
—
3.0
2.4
0.6
—
1.5
1.9
1.7
Unit
mA
V
µA
V
nF
nF
nF
nC
V
°C/W
°C/W
Max.
8
1.5
1.7
Unit
mA
V
°C/W
Feb.1999