CM30MD-12H Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Collector Current
ICM
IE (Note. 1) _{Emitter Current}
IEM (Note. 1)
PC (Note. 3) Maximum collector dissipation
G – E Short
C – E Short
TC = 25°C
PULSE
TC = 25°C
PULSE
Tf = 25°C
Condition
MITSUBISHI IGBT MODULES
CM30MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
(Note. 2)
(Note. 2)
Rating
Unit
600
V
±20
V
30
A
60
A
30
A
60
A
66
W
BRAKE PART
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
ICM
Collector Current
PC (Note. 3) Maximum Collector dissipation
VRRM
Repetitive peak reverse voltage
IFM (Note. 3) Forward current
G – E Short
C – E Short
TC = 25°C
PULSE
Tf = 25°C
Clamp diode part
Clamp diode part
Condition
(Note. 2)
Rating
Unit
600
V
±20
V
30
A
60
A
66
W
600
V
30
A
CONVERTER PART
Symbol
VRRM
Ea
IO
IFSM
I²t
Parameter
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I²t for fusing
Condition
3φ rectifying circuit
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
Rating
Unit
800
V
220
V
30
A
300
A
375
A²s
COMMON RATING
Symbol
Tj
Tstg
Viso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Condition
AC 1 min.
Mounting M4 screw
Typical value
Rating
–40 ~ +150
–40 ~ +125
2500
0.98 ~1.47
100
Unit
°C
°C
V
N.m
g
Feb.1999