CM20TF-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM20TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
40
V_GE = 20V ₁₅
T_j = 25°C
12
32
11
24
10
16
9
8
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
CAPACITANCE VS. V_CE
(TYPICAL)
10¹
C_ies
10⁰
C_oes
10^-1
C_res
V_GE = 0V
10⁰
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(off)
t_f
10²
t_r
t_d(on)
10¹
10⁰
V_CC = 600V
V_GE = ±15V
R_G = 16Ω
T_j = 125°C
10¹
COLLECTOR CURRENT, I_C, (AMPERES)
10²
TRANSFER CHARACTERISTICS
(TYPICAL)
40
V_CE = 10V
T_j = 25°C
32
T_j = 125°C
24
16
8
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_CE = 10V
T_j = 25°C
4
T_j = 125°C
3
2
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
7 ^{Tj = 25°C}
5
3
2
10¹
7
5
3
2
10⁰
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 40A
6
I_C = 20A
4
1
0
0
8
16 24 32 40
COLLECTOR-CURRENT, I_C, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10¹
di/dt = -40A/µsec
T_j = 25°C
I_rr
10²
t_rr
10⁰
2
I_C = 8A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
GATE CHARGE, V_GE
20
IC = 20A
16
V_CC = 400V
V_CC = 600V
12
8
4
10¹
10^-1
0
10⁰
10¹
10²
0
40
80
120
160
EMITTER CURRENT, I_E, (AMPERES)
GATE CHARGE, Q_G, (nC)
Sep.1998