CM20TF-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM20TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
DJ
A
C
K
H
H
N
GUP EUP
GVP EVP
GWP EWP
P
U
N
V
W
GUN EUN
GVN EVN
GWN EWN
R QRQR P
B
S - DIA.
(2 TYP.)
LE
TAB #250, t = 0.8
TAB #110, t = 0.5
G
M
P
GuP
EuP
U
GvP
EvP
V
F
R
GwP
EwP
W
GuN
EuN
N
GvN
EvN
GwN
EwN
Outline Drawing and Circuit Diagram
Dimensions Inches
A
4.21
B
3.66±0.01
C
3.19
D
1.77
E
1.18
F
1.11
G
1.05
H
0.85
J
0.83
Millimeters
107.0
93.0±0.2
81.0
45.0
30.0
28.2
26.6
21.5
21.0
Dimensions Inches
K
0.79
L
0.71
M
0.69
N
0.69
P
0.63
Q
0.55
R
0.30
S
0.22 Dia.
Millimeters
20.0
18.0
17.5
17.5
16.0
14.0
7.5
Dia. 5.5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-24H
is a 1200V (V_CES), 20 Ampere
Six-IGBT Module.
Type
Current Rating
Amperes (20)
V_CES
Volts (x 50)
CM
20
24
Sep.1998