CM200DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
400
Tj = 25°C
350
VGE=20
(V)
14
13
15
300
12
250
200
11
150
10
100
50
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
9
VGE = 15V
8
Tj = 25°C
7
Tj = 125°C
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
3
Tj = 125°C
2
Tj = 25°C
10²
7
5
3
2
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
400
VCE = 10V
350
300
250
200
150
100
50
Tj = 25°C
Tj = 125°C
0
0
5
10
15
20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 400A
6
IC = 200A
4
IC = 80A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
7
5
3
Cies
2
10¹
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–1
10^–1 2 3 5 7 10⁰ 2 3
Coes
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb.2004