CM200DU-24NFH Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
PC’ (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
Operation
Pulse
Operation
Pulse
TC = 25°C
TC’ = 25°C^*4
Conditions
Main Terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Ratings
1200
±20
200
400
200
400
830
1300
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Unit
V
V
A
A
A
A
W
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V
4.5
IGES
Gate leakage current
VGE = VGES, VCE = 0V
—
Collector-emitter
Tj = 25°C
—
VCE(sat) _{saturation voltage (Note 4) Tj = 125°C}
IC = 200A, VGE = 15V
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 600V, IC = 200A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 600V, IC = 200A
—
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
—
tf
Turn-off fall time
RG = 1.6Ω, Inductive load switching operation
—
trr (Note 1) Reverse recovery time
IE = 200A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 200A, VGE = 0V
—
Rth(j-c)Q _{Thermal resistance*1}
IGBT part (1/2 module)
—
Rth(j-c)R
FWDi part (1/2 module)
—
Rth(c-f)
Contact thermal resistance Case to fin, Thermal compound Applied^*2 (1/2 module)
—
Rth(j-c’)Q _{Thermal resistance*4}
IGBT part (1/2 module)
—
Rth(j-c’)R
FWDi part (1/2 module)
—
RG
External gate resistance
1.6
*^{1 : TC measured point is shown in page OUTLINE DRAWING.}
*^{2 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
*^{3 : If you use this value, Rth(f-a) should be measured just under the chips.}
*^{4 : TC’ measured point is just under the chips.}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
Limits
Typ.
Max. ^Unit
—
1
mA
6
7.5
V
—
0.7
µA
5.0
6.5
5.0
—
V
—
32
nF
—
2.7
nF
—
0.6
nF
900
—
nC
—
300
ns
—
80
ns
—
500
ns
—
150
ns
—
250
ns
7.5
—
µC
—
3.5
V
—
0.15 °C/W
—
0.24 °C/W
0.04
— °C/W
— 0.095^*3 °C/W
—
0.14^{*3 °C/W}
—
16
Ω
Feb.2004