CM100DY-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
200
T_j = 25^oC
15
12
160 V_GE = 20V
11
120
10
80
9
40
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 200A
6
I_C = 100A
4
2
I_C = 40A
0
0
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
10²
t_d(on)
V_CC = 600V
V_GE = ±15V
R_G = 3.1Ω
T_j = 125°C
t_r
10¹
10⁰
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_CE = 10V
T_j = 25°C
160
T_j = 125°C
120
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
80
2
40
1
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
7
5 ^{Tj = 25°C}
3
2
10²
7
5
3
2
10¹
7
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
10²
t_rr
10¹
I_rr
0
0
40
80 120 160 200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
C_ies
10¹
C_oes
10⁰
V_GE = 0V
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 100A
16
V_CC = 400V
V_CC = 600V
12
8
di/dt = -200A/µsec
T_j = 25°C
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10⁰
10²
4
0
0
200
400
600
800
GATE CHARGE, Q_G, (nC)
Sep.1998