CM100DY-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
C
K
A
B
H
E
E
H
C2E1
E2
C1
S
G
L
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
J
J
J
N
N
S
TAB#110 t=0.5
M
D
F
Q
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.89
1.18 Max.
0.90
0.83
0.71
0.67
0.62
Millimeters
94.0
80.0±0.25
48.0
30.0 Max.
23.0
21.2
18.0
17.0
16.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.51
0.47
0.30
0.28
0.256 Dia.
0.31
M5 Metric
0.16
Millimeters
13.0
12.0
7.5
7.0
Dia. 6.5
8.0
M5
4.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (V_CES), 100 Ampere
Dual IGBT Module.
Type
CM
Current Rating
Amperes
100
V_CES
Volts (x 50)
24
Sep.1998