BCR2PM Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS
3
2
10¹
7
5
3
VGM = 6V
2
PGM = 1W
PG(AV)
= 0.1W
10⁰
VGT
7
5
3
2
IGM = 1A
IRGT I, IRGT III
10^–1
7
5
VGD = 0.1V
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
VRGT I
7
5
4
3
VRGT III
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
1.8
1.6
1.4 360°
CONDUCTION
1.2 _RESISTIVE,
1.0 ^INDUCTIVE
LOADS
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
IRGT I , IRGT III
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
NATURAL CONVECTION
10⁰
7
NO FINS
PRINT BOARD
5
t = 1.6mm

3
2
SOLDER LAND : φ2mm
10^–1
10¹2 3 5 710²2 3 5 710³2 3 5 710⁴2 3 5 7 10⁵
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
PRINT BOARD
120
t = 1.6mm

SOLDER LAND : φ2mm
100
CURVES APPLY
80
REGARDLESS OF
CONDUCTION ANGLE
60
RESISTIVE,
INDUCTIVE LOADS
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
Feb.1999