BCR2PM Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM
On-state voltage
Ta=25°C, ITM=1.5A, Instantaneous measurement
VRGT !
VRGT #
Gate trigger voltage ^V2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
IRGT !
IRGT #
Gate trigger current ^V2
@
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
Rth (j-a)
Thermal resistance
Junction to ambient, Natural convection
V2. Measurement using the gate trigger characteristics measurement circuit.
Limits
Min. Typ. Max.
—
—
0.5
—
—
1.6
—
—
2.0
—
—
2.0
—
—
10
—
—
10
0.1
—
—
—
—
40
Unit
mA
V
V
V
mA
mA
V
°C/ W
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 2 TEST PROCEDURE 3
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10²
7
5 _{Tj = 25°C}
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999