BCR16A Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
2-φ3.2 MIN
BCR16B
1
3
2
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
3
φ2.0 MIN
23±0.2
33 MAX
1
φ8.7 MAX
2
BCR16C
2-φ3.2 MIN
Dimensions
in mm
BCR16E
5.3 MAX
3
φ2.0 MIN
(16.2)
1
φ8.7 MAX
2
M6 × 1 . 0
(φ16)
23±0.2
φ33 MAX
2
φ2.5 MIN
1
φ2.0 MIN
3
φ2.0 MIN
φ8.7 MAX
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10³
7 TC = 25°C
5 _{Tb = 25°C}
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10⁰
2 3 4 5 7 10¹
2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
3
2 VGM = 10V
10¹
7
5
3
2
VGT = 1.5V
PG(AV) = 0.5W
PGM = 5.0W
IGM = 2A
10⁰
7
5
3
2
IFGT I, IRGT I, IRGT III
10^–1
7
5
10¹ 2 3 5 7 10² 2 3
VGD = 0.2V
5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ
180
160
GATE TRIGGER CURRENT
140
120
100
80
60 ^{GATE TRIGGER}
VOLTAGE
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999