BCR16A Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
T stg
Parameter
Storage temperature
—
Weight (Typical value)
—
—
Viso
Soldering temperature
Mounting torque
Isolated voltage
Test conditions
BCR16A
BCR16B
BCR16C
BCR16E
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, Ta=25°C, AC 1 minute, T2 Terminal to base
Ratings
–20 ~ +125
3.0
8.5
8.5
9.5
230
30
2.94
1500
Unit
°C
g
°C
kg·cm
N·m
V
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM
On-state voltage
Tc=25°C, Tb=25°C (BCR16E only), ITM=25A , Instantaneous
measurement
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)
Gate trigger voltage ^V2
Gate trigger current ^V2
Gate non-trigger voltage
Thermal resistance
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Tj=125°C, VD=1/2VDRM
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
—
—
3.0
—
—
1.6
—
—
1.5
—
—
1.5
—
—
1.5
—
—
30
—
—
30
—
—
30
0.2
—
—
—
—
1.2
—
—
2.5
V3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R
—
L
10
R
—
10
500
L
10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–8A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
Feb.1999