M2V64S20BTP-6 Datasheet, PDF (29/52 Pages) Mitsubishi Electric Semiconductor – 64M bit Synchronous DRAM

PC133 SDRAM (Rev.0.5)
Oct. '99
64M bit Synchronous DRAM
MITSUBISHI LSIs
M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)
ABSOLUTE MAXIMUM RATINGS
Symbol
Vdd
VddQ
VI
VO
IO
Pd
Topr
Tstg
Parameter
Supply Voltage
Supply Voltage for Output
Input Voltage
Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Conditions
with respect to Vss
with respect to VssQ
with respect to Vss
with respect to VssQ
Ta = 25ºC
Ratings
-0.5 - 4.6
-0.5 - 4.6
-0.5 - 4.6
-0.5 - 4.6
50
1000
0 - 70
-65 - 150
Unit
V
V
V
V
mA
mW
ºC
ºC
RECOMMENDED OPERATING CONDITIONS
(Ta=0 – 70ºC, unless otherwise noted )
Symbol
Vdd
Vss
Parameter
Supply Voltage
Supply Voltage
Min.
3.0
0
VddQ
Supply Voltage for Output
3.0
VssQ
Supply Voltage for Output
0
VIH*1
High-level Input Voltage all inputs
2.0
VIL*2
Low-level Input Voltage all inputs
-0.3
NOTES)
1. VIH(max)= Vdd+2.0V AC for pulse width less than 3ns acceptable.
2. VIL(min) = -2.0V AC for pulse width less than 3ns acceptable.
Limits
Typ.
3.3
0
3.3
0
Unit
Max.
3.6
V
0
V
3.6
V
0
V
VddQ +0.3
V
0.8
V
CAPACITANCE
(Ta=0 – 70ºC, Vdd= VddQ= 3.3 ± 0.3V, Vss= VssQ= 0V, unless otherwise noted )
Symbol
Parameter
Test Condition Limits (min.)
Limits (max.)
Unit
CI(A)
Input Capacitance, address pin
2.5
CI(C)
Input Capacitance, contorl pin
1MHz,
2.5
1.4v bias
CI(K)
Input Capacitance, CLK pin
200mV swing
2.5
CI/O
Input Capacitance, I/O pin
4.0
3.8
pF
3.8
pF
3.5
pF
6.5
pF
MITSUBISHI ELECTRIC
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