PS51259-A Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – TRANSFER-MOLD TYPE INSULATED TYPE

MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS51259-A
TRANSFER-MOLD TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
MAIN CIRCUIT PART
Symbol
Parameter
Conditions
Ratings
Unit
Vi
Supply Voltage
Applied between : S-R
264
Vrms
Vi(surge) Supply Voltage (surge)
Applied between : S-R,
Surge value, Non-operating
500
V
VO
Output Voltage
Applied between : P-N
450
V
VO(surge) Output Voltage (surge)
VCES
Collector-Emitter Voltage
Applied between : P-N,
Surge value, Non-operating
—
500
V
600
V
VRRM
Repetitive Peak Reverse Voltage
—
600
V
Ii
Input Current (100% Load)
TC ≤ +90°C, Vi = 200V, VO = 300V,
fPWM = 20kHz
20
Arms
Ii(125%)
I²t
Input Current (125% Load)
I²t for Fu sing
TC ≤ +90°C, Vi = 200V, VO = 300V,
fPWM = 20kHz, 1 min Non-repetitive
Value for 1msec of Surge Current
25
Arms
120
A²s
Tj
Junction Temperature
(Note 1)
–20~+125
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-PFC is 150°C (@ TC ≤ 100°C) however, to en-
sure safe operation of the DIP-PFC, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).
CONTROL (PROTECTION) PART
Symbol
VD
VIN
Parameter
Control supply voltage
Control input voltage
Condition
Applied between : VD-GND
Applied between : VIN-GND
Ratings
Unit
20
V
0~VD+0.5
V
TOTAL SYSTEM
Symbol
TC
Tstg
Parameter
Module case operation temperature
Storage temperature
Viso
Isolation voltage
Condition
(Note 2)
60Hz, Sinusoidal, AC 1 minute, connection
pins to heat-sink plate
Ratings
–20~+100
–40~+125
1500
Unit
°C
°C
Vrms
Note 2 : TC MEASUREMENT POINT
Control Terminals
Tc
Power Terminals
Heat sink
Tc
Heat sink boundary
Mar. 2003