MGFC5212 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – K-Band 2-Stage Power Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5212
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
1205
460
GND
Vg1
950
RF in
GND
GND
Vg2 GND
RF out
GND
550
Vd1 ^{R(Vd1) R(Vd2) GND Vd2}
550
350
760
910
1210
1700
X Dimention 1.70 mm
Y Dimention 0.95 mm
MITSUBISHI
ELECTRIC
as of July '98