MGFC5212 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – K-Band 2-Stage Power Amplifier

PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGFC5212 is a GaAs MMIC chip especially
designed for 24.5 ~ 26.5 GHz band High
Power Amplifier (HPA) .
FEATURES
RF frequency : 24.5 to 26.5 GHz
Linear gain : ≥ 13 dB
P1dB : ≥ 23 dBm
DC power : Vd = 5 V, Id1 + Id2 = 270 mA
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5212
K-Band 2-Stage Power Amplifier
BLOCK DIAGRAM
Vg1 Vg2
In
Out
Vd1 Vd2
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol
Vd1, Vd2
Vg1, Vg2
Id1
Id2
Pin
Ta
Tstg
Tmax
Parameter
Drain supply voltage
Gate supply voltage
Drain current 1
Drain current 2
RF input power
Backside ambient temp.
Storage temp.
Maximum assembly temp.
Ratings
6
-3 ^~ 0.5
120
240
16
-20 ^~ +70
-65 ^~ +175
+300
Units
V
V
mA
mA
dBm
˚C
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
Symbol
Parameter
Conditions
Gain
Gain
VSWR in Input VSWR
VSWR out
P1dB
Output VSWR
Output power at 1 dB
compression point
IM3
Inter modulation level
Vd = 5 V
Id1 = 90 mA
Id2 = 180 mA
(RF off)
f = 24.5, 26.5 GHz
Single tone
f = 24.5, 26.5 GHz
Tow tone(10MHz off)
Pout = 20 dBm
Limits
Min. Typ.
Max.
Units
13.0
dB
2.2
-
2.2
-
23.0
dBm
(22.0)
dBc
MITSUBISHI
ELECTRIC
as of July '98