M63806P Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 300mA TRANSISTOR ARRAY

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
V CEO
IC
VI
Parameter
Collector-emitter voltage
Collector current
Input voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63806P
M63806FP
M63806KP
Ratings
Unit
–0.5 ~ +35
V
300
mA
–0.5 ~ +35
V
1.79
1.10
W
0.68
–40 ~ +85
°C
–55 ~ +125
°_C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
VO
Output voltage
Collector current
(Current per 1 cir-
IC
cuit when 8 circuits
are coming on si-
multaneously)
VIN
Input voltage
Test conditions
M63806P
M63806FP
M63806KP
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
Limits
Unit
min
typ
max
0
—
35
V
0
—
250
0
—
170
0
—
250
mA
0
—
130
0
—
250
0
—
100
0
—
20
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
VIN(on)
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
VCE = 10V, IC = 10mA
Limits
Unit
min
typ
max
35
—
—
V
—
—
0.2
—
—
0.8
V
2.4
3.5
4.2
V
50
—
—
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
125
—
ns
—
250
—
ns
Jan. 2000