M63806P Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 300mA TRANSISTOR ARRAY

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63806P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63806P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q _{Three package configurations (P, FP, and KP)}
q Medium breakdown voltage (BVCEO ≥ 35V)
q _{Synchronizing current (IC(max) = 300mA)}
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ ⁸
GND 9
18 →O1
17 →O2
16 →O3
15 →O4
14 →O5
13 →O6
12 →O7
11 →_O8
10 →NC
OUTPUT
Package type 18P4G(P)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63806P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
NC 1
IN1→ 2
IN2→ 3
IN3→ 4
INPUT
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND ¹⁰
20 NC
19 →O1
18 ^→O2
17 →O3
16 →O4
15 →O5
14 →O6
13 →O7
12 →O8
11 →NC
OUTPUT
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
INPUT
2.7K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000