CM75TU-24H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T_j < 150°C)
Mounting Torque, M5 Main Terminal
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
CM75TU-24H
-40 to 150
-40 to 125
1200
±20
75
150*
75
150*
600
2.5~3.5
Mounting Torque, M5 Mounting
–
2.5~3.5
Weight
–
680
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
–
Gate Leakage Voltage
I_GES
V_GE = V_GES, V_CE = 0V
–
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V_GE(th)
I_C = 7.5mA, V_CE = 10V
4.5
V_CE(sat)
I_C = 75A, V_GE = 15V, T_j = 25°C
–
I_C = 75A, V_GE = 15V, T_j = 125°C
–
Total Gate Charge
Emitter-Collector Voltage*
Q_G
V_EC
V_CC = 600V, I_C = 75A, V_GE = 15V
–
I_E = 75A, V_GE = 0V
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
Typ.
–
–
6
2.9
2.85
280
–
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
–
V_CE = 10V, V_GE = 0V
–
–
V_CC = 600V, I_C = 75A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 4.2Ω, Resistive
–
Load Switching Operation
–
I_E = 75A, di_E/dt = -150A/µs
–
I_E = 75A, di_E/dt = -150A/µs
–
Typ.
–
–
–
–
–
–
–
–
0.41
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.7
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Max.
11
3.7
2.2
100
200
250
350
300
–
Units
nF
nF
nF
ns
ns
ns
ns
µC
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/6 Module
–
Thermal Resistance, Junction to Case
R_th(j-c)D
Per Free-Wheel Diode 1/6 Module
–
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.015
Max.
0.21
0.47
–
Units
°C/W
°C/W
°C/W
Sep.1998