CM75TU-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
G
EH
A
B
F
EH
G
ES
R 4 - Mounting
Holes
K
D
C
GuP
EuP
T_C
Measured
Point
GvP
EvP ^GwP
EwP
GuN
EuN
GvN
EvN
u
v
w
L
T_C
Measured _M
Point
GwN
EwN
5 - M5 NUTS
EHE H E
J
J
N
K
TAB#110 t=0.5
P
Q
P
GuP
EuP
U
GvP
GwP
EvP
EwP
V
W
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
GwN
EwN
Dimensions Inches
A
4.21
B
3.54±0.01
C
4.02
D
3.15±0.01
E
0.43
F
0.91
G
0.47
H
0.85
J
0.91
Millimeters
107.0
90.0±0.25
102.0
80.0±0.25
11.0
23.0
12.0
21.7
23.0
Dimensions Inches
K
0.15
L
0.67
M
1.91
N
0.03
P
0.32
Q
1.02
R
0.22 Dia.
S
0.57
Millimeters
3.75
17.0
48.5
0.8
8.1
26.0
5.5 Dia.
14.4
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-24H is a
1200V (V_CES), 75 Ampere Six-
IGBT Module.
Type
CM
Current Rating
Amperes
75
V_CES
Volts (x 50)
24
Sep.1998