CM75DU-24H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM75DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
CM75DU-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)
Mounting Torque, M5 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
1200
±20
75
150*
75
150*
600
2.5~3.5
Mounting Torque, M6 Mounting
–
3.5~4.5
Weight
–
310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
I_CES
V_CE = V_CES, V_GE = 0V
–
–
1
mA
I_GES
V_GE = V_GES, V_CE = 0V
–
–
0.5
µA
V_GE(th)
I_C = 7.5mA, V_CE = 10V
4.5
6
7.5
Volts
V_CE(sat)
I_C = 75A, V_GE = 15V, T_j = 25°C
–
2.9
3.7
Volts
Total Gate Charge
Emitter-Collector Voltage*
I_C = 75A, V_GE = 15V, T_j = 125°C
–
2.85 –
Volts
Q_G
V_CC = 600V, I_C = 75A, V_GE = 15V
–
280
–
nC
V_EC
I_E = 75A, V_GE = 0V
–
–
3.2
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics,T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
–
V_CE = 10V, V_GE = 0V
–
–
V_CC = 600V, I_C = 75A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 4.2Ω, Resistive
–
Load Switching Operation
–
I_E = 75A, di_E/dt = -150A/µs
–
I_E = 75A, di_E/dt = -150A/µs
–
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
–
–
–
–
–
–
0.41
Max.
11
3.7
2.2
100
200
250
350
300
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)Q
Per IGBT 1/2 Module
–
R_th(j-c)D
Per FWDi 1/2 Module
–
R_th(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.035
Max.
0.21
0.47
–
Units
°C/W
°C/W
°C/W
Sep.1998