CM75DU-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM75DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
T_C Measured
Point
A
E
B
F
G
H
D
C
C2E1 E2
C1
U
J
2 - Mounting
Holes
K _{(6.5 Dia.)}
V
3-M5 Nuts
O
P
L
MN
O
Q
P
TAB#110 t=0.5
S
R
T
C2E1
E2
E2
G2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
A
3.7
B
3.15±0.01
C
1.89
D
0.94
E
0.28
F
0.67
G
0.91
H
0.91
J
0.43
K
0.71
L
0.16
Millimeters
94.0
80.0±0.25
48.0
24.0
7.0
17.0
23.0
23.0
11.0
18.0
4.0
Dimensions Inches
Millimeters
M
0.47
12.0
N
0.53
13.5
O
0.1
2.5
P
0.63
16.0
Q
0.98
25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S
0.3
7.5
T
0.83
21.2
U
0.16
4.0
V
0.51
13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75DU-24H is a
1200V (V_CES), 75 Ampere Dual
IGBT Module.
Type
CM
Current Rating
Amperes
75
V_CES
Volts (x 50)
24
Sep.1998