CM300E3U-12H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)
Mounting Torque, M6 Main Terminal
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
CM300E3U-12H
-40 to 150
-40 to 125
600
±20
300
600*
300
600*
890
3.5~4.5
Mounting Torque, M6 Mounting
–
3.5~4.5
Weight
–
400
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
–
Gate Leakage Voltage
I_GES
V_GE = V_GES, V_CE = 0V
–
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V_GE(th)
I_C = 30mA, V_CE = 10V
4.5
V_CE(sat)
I_C = 300A, V_GE = 15V, T_j = 25°C
–
I_C = 300A, V_GE = 15V, T_j = 125°C
–
Total Gate Charge
Emitter-Collector Voltage**
Q_G
V_CC = 300V, I_C = 300A, V_GE = 15V
–
V_EC
I_E = 300A, V_GE = 0V
–
Emitter-Collector Voltage
V_FM
I_F = 300A, Clamp Diode Part
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
Typ.
–
–
6
2.4
2.6
600
–
–
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
C_ies
C_oes
–
V_CE = 10V, V_GE = 0V
–
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
t_rr
Q_rr
–
V_CC = 300V, I_C = 300A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 2.1Ω, Resistive
–
Load Switching Operation
–
I_E = 300A, di_E/dt = -600A/µs
–
I_E = 300A, di_E/dt = -600A/µs
–
I_F = 300A, Clamp Diode Part
–
di_F/dt = -600A/µs
–
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
–
–
–
–
–
–
0.72
–
0.72
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Max.
1
0.5
7.5
3.0
–
–
2.6
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
Max.
26.4
14.4
4
250
600
350
300
160
–
160
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
ns
µC
Sep.1998