CM300E3U-12H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
T_C Measured
Point
A
D
BE
T ^CM
F
S (4 - Mounting
Holes)
H
3 - M6 Nuts
Q
Q
P
N
G
K
K
K
R
M
C
L
E2
G2
C2E1
E2
C1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D
3.66±0.01
93.0±0.25
E
1.88±0.01
48.0±0.25
F
0.87
22.0
G
0.16
4.0
H
0.24
6.0
K
0.71
18.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.71
0.87
0.33
0.10
0.85
0.98
0.11
0.25 Dia.
0.6
Millimeters
18.0
22.0
8.5
2.5
21.5
25.0
2.8
6.5 Dia.
15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Application:
ٗ Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM300E3U-12H is a
600V (V_CES), 300 Ampere IGBT
Module.
Type
CM
Current Rating
Amperes
300
V_CES
Volts (x 50)
12
Sep.1998